1、process:0.18 UM CMOS High Voltage Mixed Signal based General Purpose BCD Dual Gate FSG AL 1P6M 1.8/5/6/8/12/16/20/24/29/36/45/55/65/70V/Vg1.8/5VV [SALICIDE, NBL/PBL EPI, 1.8/5/6/8/12/16/20/24/29/36/45/55/65/70V/Vg1.8/5VV] 2、Sample quantity: 1.2block(5000umX6000um)